Yassine Sayad and Abdelkader Nouiri (2013) Electroluminescence properties of InGaN/GaN multiple quantum well light emitting diodes. Int. J. Nanoparticles , 6(2-3), 201-207, Inderscience Enterprises
المنشورات العلمية
هام: هذه الصفحة مجمدة. الوثائق الحديثة متوفرة الآن في المستودع الرقمي DSpace
ملخص المقال
معلومات
| Item Type | Journal |
|---|---|
| Divisions |
» كلية العلوم و التكنولوجيا |
| ePrint ID | 68 |
| Date Deposited | 2014-10-30 |
| Further Information | Google Scholar |
| URI | https://univ-soukahras.dz/ar/publication/article/68 |
BibTex
@article{uniusa68,
title={Electroluminescence properties of InGaN/GaN multiple quantum well light emitting diodes},
author={Yassine Sayad and Abdelkader Nouiri},
journal={Int. J. Nanoparticles}
year={2013},
volume={6},
number={2-3},
pages={201-207},
publisher={Inderscience Enterprises}
}
title={Electroluminescence properties of InGaN/GaN multiple quantum well light emitting diodes},
author={Yassine Sayad and Abdelkader Nouiri},
journal={Int. J. Nanoparticles}
year={2013},
volume={6},
number={2-3},
pages={201-207},
publisher={Inderscience Enterprises}
}