Yazid TEBIB (2020) Structural Properties Survey of GaN Nanoparticles Implanted in SiO2/Si Host Matrix. University of Souk Ahras
Scientific Publications
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Abstract
This work aims to involve two parts of studies. The first one is presented as a research synthesis, which is focused on the combination of previous researches that have been achieved by our teamwork. The second part devotes a complementary study of previous research investigations where we present the structural properties of three different samples of GaN NPs, implanted into the SiO2/Si matrix, through an in-depth characterization by X-ray Diffraction, Transmission Electron Microscopy and Energy Dispersive Spectroscopy.
X-ray Diffraction patterns revealed that the hexagonal and cubic phases of GaN were existed in all samples. The presence of different phases of silica was also recorded. The estimated average particle size, of the implanted samples has been calculated between 54.80 and 70.51 nm.
TEM microanalysis revealed a homogeneous distribution of the implanted GaN NPs into the SiO2/Si matrix, which were uniformly dispersed in a flat profile. Moreover, an exo-diffusion phenomenon of of GaN NPs into the host matrix of SiO2/Si, was clearly observed over the traces of empty vacancies in the matrix layer of SiO2, which confirms a previous reports. All TEM micrographs showed several GaN nanoparticles with different crystallographic orientations and with nanometric particles sizes less than 5 nm.
The elementary analysis provided more information on the quantitative state of the implanted samples. EDX results revealed that the implanted GaN NPs samples were homogeneous, pure and have a good stoichiometric state, which confirms the microstructural results investigated via XRD and TEM.
Keywords: GaN Nanoparticules; Ion implantation; XRD patterns, TEM, EDX, RBS.
X-ray Diffraction patterns revealed that the hexagonal and cubic phases of GaN were existed in all samples. The presence of different phases of silica was also recorded. The estimated average particle size, of the implanted samples has been calculated between 54.80 and 70.51 nm.
TEM microanalysis revealed a homogeneous distribution of the implanted GaN NPs into the SiO2/Si matrix, which were uniformly dispersed in a flat profile. Moreover, an exo-diffusion phenomenon of of GaN NPs into the host matrix of SiO2/Si, was clearly observed over the traces of empty vacancies in the matrix layer of SiO2, which confirms a previous reports. All TEM micrographs showed several GaN nanoparticles with different crystallographic orientations and with nanometric particles sizes less than 5 nm.
The elementary analysis provided more information on the quantitative state of the implanted samples. EDX results revealed that the implanted GaN NPs samples were homogeneous, pure and have a good stoichiometric state, which confirms the microstructural results investigated via XRD and TEM.
Keywords: GaN Nanoparticules; Ion implantation; XRD patterns, TEM, EDX, RBS.
Information
| Item Type | Master |
|---|---|
| Divisions | |
| ePrint ID | 4036 |
| Date Deposited | 2023-05-25 |
| Further Information | Google Scholar |
| URI | https://univ-soukahras.dz/en/publication/article/4036 |