Amri Houda and Zaabat Mourad (2014) Device Electromagnetic Characterization of GaAs MESFET Transistor. Research and Reviews: Journal of Pure and Applied Physics, RRJPAP , Volume 2(Issue 4), 6-11
Scientific Publications
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Abstract
In this paper, an electromagnetic study of MESFET transistor based on iterative method is presented. This method is generating the relationship between the incident and reflected waves from the planar circuits. The WCIP method is developed from the fast modal transform algorithm
Information
| Item Type | Journal |
|---|---|
| Divisions | |
| ePrint ID | 637 |
| Date Deposited | 2017-01-16 |
| Further Information | Google Scholar |
| URI | https://univ-soukahras.dz/en/publication/article/637 |
BibTex
@article{uniusa637,
title={Device Electromagnetic Characterization of GaAs MESFET Transistor},
author={Amri Houda and Zaabat Mourad},
journal={Research and Reviews: Journal of Pure and Applied Physics, RRJPAP}
year={2014},
volume={Volume 2},
number={Issue 4},
pages={6-11},
publisher={}
}
title={Device Electromagnetic Characterization of GaAs MESFET Transistor},
author={Amri Houda and Zaabat Mourad},
journal={Research and Reviews: Journal of Pure and Applied Physics, RRJPAP}
year={2014},
volume={Volume 2},
number={Issue 4},
pages={6-11},
publisher={}
}