Yassine Sayad and Abedelkader Nouiri (2014) Simulation study of InGaN/GaN multiple quantum well solar cells. Journal of Technology and New Materials JNTM , 4(1),
Scientific Publications
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Abstract
It’s known that indium gallium nitride InGaN alloys has a direct band gap varying from 0.7 to 3.4 eV which covers nearly the whole solar spectrum making it material of choice to make tandem solar cells. In other hand, it’s experimentally known that uses of InGaN/GaN multiple quantum well MQW structures in GaN based devices decreases surface recombination and, thus, enhances devices performance. Here, we present a simulation study of multiple quantum well MQW InGaN/GaN solar cells, where cell's active region is formed by a number of InGaN quantum wells (QWs) separated byGaN quantum barriers (QBs). We will present indium element content of InxGa1-xN wells and number of InGaN/GaN periods impacts on solar cell parameters.
Information
| Item Type | Journal |
|---|---|
| Divisions |
» Faculty of Science and Technology |
| ePrint ID | 405 |
| Date Deposited | 2015-09-06 |
| Further Information | Google Scholar |
| URI | https://univ-soukahras.dz/en/publication/article/405 |
BibTex
@article{uniusa405,
title={Simulation study of InGaN/GaN multiple quantum well solar cells},
author={Yassine Sayad and Abedelkader Nouiri},
journal={Journal of Technology and New Materials JNTM}
year={2014},
volume={4},
number={1},
pages={},
publisher={}
}
title={Simulation study of InGaN/GaN multiple quantum well solar cells},
author={Yassine Sayad and Abedelkader Nouiri},
journal={Journal of Technology and New Materials JNTM}
year={2014},
volume={4},
number={1},
pages={},
publisher={}
}