Abstract

The diffusion length of minority carriers is one of the most important electrical parameters to qualify silicon for photovoltaic applications. One way to evaluate this parameter is to analyse the
decay of the current induced when a focused beam is scanned away from the collector using Light Beam Induced Current (LBIC) technique. The LBIC signal was numerically calculated with 2DDESSIS software under different boundary conditions, as a function of material thickness and surface recombination velocity in order to verify the limitations of analytical models and to fit the LBIC signal measured in thin silicon samples. Samples with thickness ranging from 55 mm to 2500 mm were evaluated with diffusion length values ranging from 70 mm to 2.5 mm. Analytical expressions of the Internal Quantum Efficiency (IQE) were also used to extract the minority carrier bulk and effective diffusion lengths from surface averaged spectral response and reflectivity data in thick solar cells.

Information

Item Type:	Journal
Divisions:	» Faculty of Science and Technology
ePrint ID:	495
Date Deposited:	2016-02-05
Further Information:	Google Scholar
URI:	https://www.univ-soukahras.dz/en/publication/article/495

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