Yassine Sayad, A. Kaminski, D. Blanc and A. Nouiri (2009) Determination of diffusion length in photovoltaic crystalline silicon by modelisation of light beam induced current. Superlattices and Microstructures , 45(4-5), 393-401, Elsevier
Scientific Publications
Important: This page is frozen. New documents are now available in the digital repository DSpace
Abstract
The diffusion length of minority carriers is one of the most important electrical parameters to qualify silicon for photovoltaic applications. One way to evaluate this parameter is to analyse the
decay of the current induced when a focused beam is scanned away from the collector using Light Beam Induced Current (LBIC) technique. The LBIC signal was numerically calculated with 2DDESSIS software under different boundary conditions, as a function of material thickness and surface recombination velocity in order to verify the limitations of analytical models and to fit the LBIC signal measured in thin silicon samples. Samples with thickness ranging from 55 mm to 2500 mm were evaluated with diffusion length values ranging from 70 mm to 2.5 mm. Analytical expressions of the Internal Quantum Efficiency (IQE) were also used to extract the minority carrier bulk and effective diffusion lengths from surface averaged spectral response and reflectivity data in thick solar cells.
decay of the current induced when a focused beam is scanned away from the collector using Light Beam Induced Current (LBIC) technique. The LBIC signal was numerically calculated with 2DDESSIS software under different boundary conditions, as a function of material thickness and surface recombination velocity in order to verify the limitations of analytical models and to fit the LBIC signal measured in thin silicon samples. Samples with thickness ranging from 55 mm to 2500 mm were evaluated with diffusion length values ranging from 70 mm to 2.5 mm. Analytical expressions of the Internal Quantum Efficiency (IQE) were also used to extract the minority carrier bulk and effective diffusion lengths from surface averaged spectral response and reflectivity data in thick solar cells.
Information
| Item Type | Journal |
|---|---|
| Divisions |
» Faculty of Science and Technology |
| ePrint ID | 495 |
| Date Deposited | 2016-02-05 |
| Further Information | Google Scholar |
| URI | https://univ-soukahras.dz/en/publication/article/495 |
BibTex
@article{uniusa495,
title={Determination of diffusion length in photovoltaic crystalline silicon by modelisation of light beam induced current},
author={Yassine Sayad, A. Kaminski, D. Blanc and A. Nouiri},
journal={Superlattices and Microstructures}
year={2009},
volume={45},
number={4-5},
pages={393-401},
publisher={Elsevier}
}
title={Determination of diffusion length in photovoltaic crystalline silicon by modelisation of light beam induced current},
author={Yassine Sayad, A. Kaminski, D. Blanc and A. Nouiri},
journal={Superlattices and Microstructures}
year={2009},
volume={45},
number={4-5},
pages={393-401},
publisher={Elsevier}
}