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Minority carrier lifetime (?) and diffusion length (L) arethe most important electrical parameters to qualify siliconfor photovoltaic applications. Amongst the availabletechniques for measuring this parameter, photoluminescencehas regained interest as it can be done on raw materialas well as on completed solar cells in a non destructiveway. Although very efficient mapping systems canprovide fast information on multicrystalline samplesmost quantitative measurements require a calibration thatis normally achieved by correlation with other techniqueslike photoconductance decay. In this paper, we show thatL may be evaluated in a simple way from the dependenceof the room temperature photoluminescence signal on theexcitation beam intensity using an analytical model basedon 1D carrier diffusion. Using this 1D model, the diffusionlength was calculated in photovoltaic grade siliconmaterials without calibration by external technique.

Item Type	Journal
Divisions	» Faculty of Science and Technology
ePrint ID	5
Date Deposited	2014-10-30
Further Information	Google Scholar
URI	https://univ-soukahras.dz/en/publication/article/5

@article{uniusa5,
    title={Diffusion length determination in solar grade silicon by room temperature photoluminescence measurements},
    author={Yassine Sayad, Blanc Danièle, Kaminski Anne and Bremond George},
    journal={Phys. Status Solidi C}
    year={2010},
    volume={8},
    number={3},
    pages={808-811},
    publisher={Wily Online Library}
}