Abstract

All previous concepts for describing the effective local series resistance of really existing solar cells, as it
can be measured e.g. by luminescence imaging, try to describe it by a single local number. In solar cells
showing an inhomogeneous saturation current density, this results in different series resistance images
for the dark and illuminated case. The reason is the distributed character of the series resistance and the
different diode current profiles under these different conditions. In this work the well-known finite
element concept is used for describing a solar cell, which contains separate resistors carrying horizontal
and vertical currents. A strategy is proposed how to fit these resistors to results of electroluminescence
and lock-in thermography images of a real solar cell, leading to separate images of the local horizontal
grid resistance, which may also show broken gridlines, and the local vertical' lumped emitter contact
resistance’. The latter lumps all resistive inhomogeneities of the cell, caused by a possibly inhomoge-
neous contact-,emitter-,grid-,bulk-, and back contact resistance. It will be shown that this description of
the local series resistance reasonably describes both the dark and illuminated case,even in inhomoge-
neous multicrystalline silicon solar cells.

Information

Item Type:	Journal
Divisions:	» Faculty of Science and Technology
ePrint ID:	682
Date Deposited:	2017-03-03
Further Information:	Google Scholar
URI:	https://www.univ-soukahras.dz/en/publication/article/682

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