Résumé

Minority carrier lifetime (?) and diffusion length (L) arethe most important electrical parameters to qualify siliconfor photovoltaic applications. Amongst the availabletechniques for measuring this parameter, photoluminescencehas regained interest as it can be done on raw materialas well as on completed solar cells in a non destructiveway. Although very efficient mapping systems canprovide fast information on multicrystalline samplesmost quantitative measurements require a calibration thatis normally achieved by correlation with other techniqueslike photoconductance decay. In this paper, we show thatL may be evaluated in a simple way from the dependenceof the room temperature photoluminescence signal on theexcitation beam intensity using an analytical model basedon 1D carrier diffusion. Using this 1D model, the diffusionlength was calculated in photovoltaic grade siliconmaterials without calibration by external technique.

Information

Item Type:	Journal
Divisions:	» Faculté des Sciences et de la Technologie
ePrint ID:	5
Date Deposited:	2014-10-30
Further Information:	Google Scholar
URI:	https://www.univ-soukahras.dz/fr/publication/article/5

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